Browsing by Author Chang, Yao-Feng

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Issue DateTitleAuthor(s)
7-Jul-2017Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrodeLin, Chih-Yang; Chen, Po-Hsun; Chang, Ting-Chang; Chang, Kuan-Chang; Zhang, Sheng-Dong; Tsai, Tsung-Ming; Pan, Chih-Hung; Chen, Min-Chen; Su, Yu-Ting; Tseng, Yi-Ting; Chang, Yao-Feng; Chen, Ying-Chen; Huang, Hui-Chun; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2013Charge Quantity Influence on Resistance Switching Characteristic During Forming ProcessChu, Tian-Jian; Chang, Ting-Chang; Tsai, Tsung-Ming; Wu, Hsing-Hua; Chen, Jung-Hui; Chang, Kuan-Chang; Young, Tai-Fa; Chen, Kai-Hsang; Syu, Yong-En; Chang, Geng-Wei; Chang, Yao-Feng; Chen, Min-Chen; Lou, Jyun-Hao; Pan, Jhih-Hong; Chen, Jian-Yu; Tai, Ya-Hsiang; Ye, Cong; Wang, Hao; Sze, Simon M.; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
2013Comprehensive Trap-Level Study in SiOx-based Resistive Switching MemoryChang, Yao-Feng; Chen, Ying-Chen; Li, Ji; Xue, Fei; Wang, Yanzhen; Zhou, Fei; Fowler, Burt; Lee, Jack C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-2018The Demonstration of Increased Selectivity During Experimental Measurement in Filament-Type Vanadium Oxide-Based SelectorChen, Chun-Kuei; Lin, Chih-Yang; Chen, Po-Hsun; Chang, Ting-Chang; Shih, Chih-Cheng; Tseng, Yi-Ting; Zheng, Hao-Xuan; Chen, Ying-Chen; Chang, Yao-Feng; Lin, Chun-Chu; Huang, Hui-Chun; Huang, Wei-Chen; Wang, Hao; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2009Five-element circuit model using linear-regression method to correct the admittance measurement of metal-oxide-semiconductor capacitorCheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Liu, Jun-Cheng; Chen, Yi-Cheng; Chang, Yao-Feng; Wang, Shin-Yuan; Kei, Chi-Chung; Hsiao, Chien-Nan; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
31-May-2010Improvement of resistance switching characteristics in a thin FeO(x) transition layer of TiN/SiO(2)/FeO(x)/FePt structure by rapid annealingFeng, Li-Wei; Chang, Chun-Yen; Chang, Yao-Feng; Chang, Ting-Chang; Wang, Shin-Yuan; Chen, Shih-Ching; Lin, Chao-Cheng; Chen, Shih-Cheng; Chiang, Pei-Wei; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
31-May-2010Improvement of resistance switching characteristics in a thin FeOx transition layer of TiN/SiO2/FeOx/FePt structure by rapid annealingFeng, Li-Wei; Chang, Chun-Yen; Chang, Yao-Feng; Chang, Ting-Chang; Wang, Shin-Yuan; Chen, Shih-Ching; Lin, Chao-Cheng; Chen, Shih-Cheng; Chiang, Pei-Wei; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-2014Integrated One Diode-One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere LithographyJi, Li; Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chen, Min-Chen; Chang, Ting-Chang; Sze, Simon M.; Yu, Edward T.; Lee, Jack C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-2011Investigation statistics of bipolar multilevel memristive mechanism and characterizations in a thin FeO(x) transition layer of TiN/SiO(2)/FeO(x)/Fe structureChang, Yao-Feng; Chang, Ting-Chang; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-2011Investigation statistics of bipolar multilevel memristive mechanism and characterizations in a thin FeO(x) transition layer of TiN/SiO(2)/FeO(x)/Fe structure (vol 110, 053703, 2011)Chang, Yao-Feng; Chang, Ting-Chang; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-2011Investigation statistics of bipolar multilevel memristive mechanism and characterizations in a thin FeOx transition layer of TiN/SiO2/FeOx/Fe structure (vol 110, 053703, 2011)Chang, Yao-Feng; Chang, Ting-Chang; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-Dec-2011Mechanism and characterizations studies of resistive switching effects on a thin FeO(x)-transition layer of the Ti/TiN/SiO(2)/FeO(x)/FePt structure by thermal annealing treatmentsChang, Yao-Feng; Feng, Li-Wei; Chang, Ting-Chang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-Dec-2011Mechanism and characterizations studies of resistive switching effects on a thin FeOx-transition layer of the Ti/TiN/SiO2/FeOx/FePt structure by thermal annealing treatmentsChang, Yao-Feng; Feng, Li-Wei; Chang, Ting-Chang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
30-Dec-2010Reproducible resistance switching of a relatively thin FeO(x) layer produced by oxidizing the surface of a FePt electrode in a metal-oxide-metal structureFeng, Li-Wei; Chang, Yao-Feng; Chang, Chun-Yen; Chang, Ting-Chang; Wang, Shin-Yuan; Chiang, Pei-Wei; Lin, Chao-Cheng; Chen, Shih-Ching; Chen, Shih-Cheng; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
30-Dec-2010Reproducible resistance switching of a relatively thin FeOx layer produced by oxidizing the surface of a FePt electrode in a metal-oxide-metal structureFeng, Li-Wei; Chang, Yao-Feng; Chang, Chun-Yen; Chang, Ting-Chang; Wang, Shin-Yuan; Chiang, Pei-Wei; Lin, Chao-Cheng; Chen, Shih-Ching; Chen, Shih-Cheng; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2014Resistive Switching of SiOX with One Diode-One Resistor Nanopillar Architecture Fabricated via Nanosphere LithographyJi, Li; Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chen, Min-Chen; Chang, Ting-Chang; Sze, Simon M.; Yu, Edward T.; Lee, Jack C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
28-Dec-2009Role of germanium in the reduced temperature dependence of Ti-based nanocrystals formation for nonvolatile memory applicationsFeng, Li-Wei; Chang, Chun-Yen; Chang, Ting-Chang; Tu, Chun-Hao; Wang, Pai-Syuan; Chang, Yao-Feng; Chen, Min-Chen; Huang, Hui-Chun; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2012Study of Electric Faucet Structure by Embedding Co Nanocrystals in a FeOx-Based MemristorChang, Yao-Feng; Tsai, Yu-Ting; Syu, Yong-En; Chang, Ting-Chang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2012Study of Resistive Switching Characteristics on a Temperature-Sensitive FeOx-Transition Layer in a TiN/SiO2/FeOx/Fe StructureChang, Yao-Feng; Tsai, Yu-Ting; Chang, Geng-Wei; Syu, Yong-En; Tai, Ya-Hsiang; Chang, Ting-Chang; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
1-Feb-2010A study of resistive switching effects on a thin FeO(x) transition layer produced at the oxide/iron interface of TiN/SiO(2)/Fe-contented electrode structuresFeng, Li-Wei; Chang, Chun-Yen; Chang, Yao-Feng; Chen, Wei-Ren; Wang, Shin-Yuan; Chiang, Pei-Wei; Chang, Ting-Chang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics