Browsing by Author Chang, L.

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Showing results 1 to 19 of 19
Issue DateTitleAuthor(s)
2007Amorphous carbon coated silicon nanotips fabricated by MPCVD using anodic aluminum oxide as the templateChen, Te-Ming; Pan, Fu-Ming; Hung, Jui-Yi; Chang, L.; Wu, Shich-Chuan; Chen, Chia-Fu; 材料科學與工程學系; Department of Materials Science and Engineering
9-Jun-2008Atomic scale characterization of buried In(x)Ga(1-x)As quantum dots using pulsed laser atom probe tomographyMueller, M.; Cerezo, A.; Smith, G. D. W.; Chang, L.; Gerstl, S. S. A.; 材料科學與工程學系; Department of Materials Science and Engineering
30-Aug-2010Bimodel onset strain relaxation in InAs quantum dots with an InGaAs capping layerChen, J. F.; Chen, Ross C. C.; Chiang, C. H.; Chen, Y. F.; Wu, Y. H.; Chang, L.; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
15-Jul-2008Effect of antimony incorporation on the density, shape, and luminescence of InAs quantum dotsChen, J. F.; Chiang, C. H.; Wu, Y. H.; Chang, L.; Chi, J. Y.; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
1-Feb-2007Effect of gate sinking on the device performance, of the InGaP/AlGaAs/InGaAs enhancement-mode PHEMTChu, L. H.; Chang, E. Y.; Chang, L.; Wu, Y. H.; Chen, S. H.; Hsu, H. T.; Lee, T. L.; Lien, Y. C.; Chang, C. Y.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Apr-2015The Effect of Tensile Strain on Optical Anisotropy and Exciton of m-Plane ZnOWang, H. H.; Tian, J. S.; Chen, C. Y.; Huang, H. H.; Yeh, Y. C.; Deng, P. Y.; Chang, L.; Chu, Y. H.; Wu, Y. R.; He, J. H.; 材料科學與工程學系; Department of Materials Science and Engineering
15-Dec-2010Electron delocalization of tensily strained GaAs quantum dots in GaSb matrixLin, T. C.; Wu, Y. H.; Li, L. C.; Sung, Y. T.; Lin, S. D.; Chang, L.; Suen, Y. W.; Lee, C. P.; 材料科學與工程學系; 電子工程學系及電子研究所; 奈米科技中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; Center for Nanoscience and Technology
2008Fabrication and field-emission characteristics of TiN nanorods with a concave top surfaceChen, Te-Ming; Hung, Jui-Yi; Pan, Fu-Ming; Chang, L.; Sheu, J. -T.; Wu, Shich-Chuan; 材料科學與工程學系; 材料科學與工程學系奈米科技碩博班; Department of Materials Science and Engineering; Graduate Program of Nanotechnology , Department of Materials Science and Engineering
13-Oct-2008Geometrical correlations of quantum dots in InAs/GaAs superlattice structure from electron tomographyWu, Y. H.; Chang, L.; Chen, L. C.; Chen, H. S.; Chen, F. R.; 材料科學與工程學系; Department of Materials Science and Engineering
1-Jan-2012How do InAs quantum dots relax when the InAs growth thickness exceeds the dislocation-induced critical thickness?Chen, J. F.; Lin, Y. C.; Chiang, C. H.; Chen, Ross C. C.; Chen, Y. F.; Wu, Y. H.; Chang, L.; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
15-Aug-2011Improving the photoluminescence properties of self-assembled InAs surface quantum dots by incorporation of antimonyChiang, C. H.; Wu, Y. H.; Hsieh, M. C.; Yang, C. H.; Wang, J. F.; Chen, Ross C. C.; Chang, L.; Chen, J. F.; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
1-Oct-2006Magnetotransport properties, electronic structure, and microstructure of La0.7Sn0.3MnO3 thin filmsCheng, T. Y.; Lin, C. W.; Chang, L.; Hsu, C. H.; Lee, J. M.; Chen, J. M.; Lin, J. -Y.; Wu, K. H.; Uen, T. M.; Gou, Y. S.; Juang, J. Y.; 材料科學與工程學系; 電子物理學系; 物理研究所; Department of Materials Science and Engineering; Department of Electrophysics; Institute of Physics
11-Feb-2015The muon system of the Daya Bay Reactor antineutrino experimentAn, F. P.; Balantekin, A. B.; Band, H. R.; Beriguete, W.; Bishai, M.; Blyth, S.; Brown, R. E.; Butorov, I.; Cao, G. F.; Cao, J.; Carr, R.; Chan, Y. L.; Chang, J. F.; Chang, L.; Chang, Y.; Chasman, C.; Chen, H. S.; Chen, H. Y.; Chen, Q. Y.; Chen, S. J.; Chen, S. M.; Chen, X. C.; Chen, X. H.; Chen, Y.; Chen, Y. X.; Cheng, Y. P.; Cherwinka, J. J.; Chu, M. C.; Cummings, J. P.; Dale, E.; de Arcos, J.; Deng, Z. Y.; Ding, Y. Y.; Diwan, M. V.; Draeger, E.; Du, X. F.; Dwyer, D. A.; Edwards, W. R.; Ely, S. R.; Fu, J. Y.; Ge, L. Q.; Gill, R.; Goett, J.; Gonchar, M.; Gong, G. H.; Gong, H.; Gu, W. Q.; Guan, M. Y.; Guo, X. H.; Hackenburg, R. W.; Han, G. H.; Hans, S.; He, M.; He, Q.; Heeger, K. M.; Heng, Y. K.; Hinrichs, P.; Hor, Y. K.; Hsiung, Y. B.; Hu, B. Z.; Hu, L. J.; Hu, L. M.; Hu, T.; Hu, W.; Huang, E. C.; Huang, H. X.; Huang, H. Z.; Huang, X. T.; Huber, P.; Hussain, G.; Isvan, Z.; Jaffe, D. E.; Jaffke, P.; Jetter, S.; Ji, X. L.; Ji, X. P.; Jiang, H. J.; Jiao, J. B.; Johnson, R. A.; Kang, L.; Kebwaro, J. M.; Kettell, S. H.; Kramer, M.; Kwan, K. K.; Kwok, M. W.; Kwok, T.; Lai, W. C.; Lai, W. H.; Lau, K.; Lebanowski, L.; Lee, J.; Lei, R. T.; Leitner, R.; Leung, A.; Leung, J. K. C.; Lewis, C. A.; Li, D. J.; Li, F.; Li, G. S.; Li, Q. J.; Li, W. D.; Li, X. N.; Li, X. Q.; Li, Y. Z. B.; Liang, H.; Lin, C. J.; Lin, G. L.; Lin, P. Y.; Lin, S. K.; Link, J. M.; Littenberg, L.; Littlejohn, B. R.; Liu, D. W.; Liu, H.; Liu, J. C.; Liu, J. L.; Liu, S. S.; Liu, Y. B.; Lu, C.; Lu, H. Q.; Luk, K. B.; Ma, Q. M.; Ma, X. B.; Ma, X. Y.; Ma, Y. Q.; McDonald, K. T.; McFarlane, M. C.; McKeown, R. D.; Meng, Y.; Mitchell, I.; Mohapatra, D.; Morgan, J. E.; Nakajima, Y.; Napolitano, J.; Naumov, D.; Naumova, E.; Nemchenok, I.; Newsom, C.; Ngai, H. Y.; Ngai, W. K.; Ning, Z.; Ochoa-Ricoux, J. P.; Olshevski, A.; Patton, S.; Pec, V.; Pearson, C. E.; Peng, J. C.; Piilonen, L. E.; Pinsky, L.; Pun, C. S. J.; Qi, F. Z.; Qi, M.; Qian, X.; Raper, N.; Ren, B.; Ren, J.; Rosero, R.; Roskovec, B.; Ruan, X. C.; Shao, B. B.; Steiner, H.; Sun, G. X.; Sun, J. L.; Tam, Y. H.; Tang, X.; Themann, H.; Tsang, K. V.; Tsang, R. H. M.; Tull, C. E.; Tung, Y. C.; Viren, B.; Virostek, S.; Vorobel, V.; Wang, C. H.; Wang, L. S.; Wang, L. Y.; Wang, L. Z.; Wang, M.; Wang, N. Y.; Wang, R. G.; Wang, W.; Wang, W. W.; Wang, X.; Wang, Y. F.; Wang, Z.; Wang, Z.; Wang, Z. M.; Webber, D. M.; Wei, H. Y.; Wei, Y. D.; Wen, L. J.; Whisnant, K.; White, C. G.; Whitehead, L.; Wilhelmi, J.; Wise, T.; Wong, H. L. H.; Wong, S. C. F.; Worcester, E.; Wu, Q.; Xia, D. M.; Xia, J. K.; Xia, X.; Xing, Z. Z.; Xu, G. H.; Xu, J.; Xu, J. L.; Xu, J. Y.; Xu, Y.; Xue, T.; Yan, J.; Yang, C. G.; Yang, L.; Yang, M. S.; Yang, M. T.; Ye, M.; Yeh, M.; Yeh, Y. S.; Young, B. L.; Yu, G. Y.; Yu, J. Y.; Yu, Z. Y.; Zang, S. L.; Zhan, L.; Zhang, C.; Zhang, F. H.; Zhang, J. W.; Zhang, K.; Zhang, Q. M.; Zhang, S. H.; Zhang, Y. H.; Zhang, Y. M.; Zhang, Y. X.; Zhang, Z. J.; Zhang, Z. P.; Zhang, Z. Y.; Zhao, J.; Zhao, Q. W.; Zhao, Y.; Zhao, Y. B.; Zheng, L.; Zhong, W. L.; Zhou, L.; Zhou, Z. Y.; Zhuang, H. L.; Zou, J. H.; 物理研究所; Institute of Physics
14-Dec-2012Orthorhombic BiFeO3Yang, J. C.; He, Q.; Suresha, S. J.; Kuo, C. Y.; Peng, C. Y.; Haislmaier, R. C.; Motyka, M. A.; Sheng, G.; Adamo, C.; Lin, H. J.; Hu, Z.; Chang, L.; Tjeng, L. H.; Arenholz, E.; Podraza, N. J.; Bernhagen, M.; Uecker, R.; Schlom, D. G.; Gopalan, V.; Chen, L. Q.; Chen, C. T.; Ramesh, R.; Chu, Y. H.; 材料科學與工程學系; Department of Materials Science and Engineering
1-May-2009Pulse Electrodeposition of Iridium Oxide on Silicon Nanotips for Field Emission studyChen, Te-Ming; Hung, Jui-Yi; Pan, Fu-Ming; Chang, L.; Wu, Shich-Chuan; Tien, Ta-Chang; 材料科學與工程學系; Department of Materials Science and Engineering
5-Sep-2007Relaxation-induced lattice misfits and their effects on the emission properties of InAs quantum dotsChen, J. F.; Wang, Y. Z.; Chiang, C. H.; Hsiao, R. S.; Wu, Y. H.; Chang, L.; Wang, J. S.; Chi, T. W.; Chi, J. Y.; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
5-Jun-2006Strain relaxation and induced defects in InAsSb self-assembled quantum dotsChen, J. F.; Hsiao, R. S.; Huang, W. D.; Wu, Y. H.; Chang, L.; Wang, J. S.; Chi, J. Y.; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
15-Nov-2008Strain relaxation in InAs self-assembled quantum dots induced by a high N incorporationChen, J. F.; Yang, C. H.; Wu, Y. H.; Chang, L.; Chi, J. Y.; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
18-Nov-2013Valley-dependent resonant inelastic transmission through a time-modulated region in grapheneLiu, T. L.; Chang, L.; Chu, C. S.; 電子物理學系; Department of Electrophysics