Browsing by Author Chandrasekaran, Sridhar

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Showing results 1 to 9 of 9
Issue DateTitleAuthor(s)
1-Apr-2018Controlled resistive switching characteristics of ZrO2-based electrochemical metallization memory devices by modifying the thickness of the metal barrier layerChandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; 電機工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Electrical and Computer Engineering
11-Sep-2017Effect of barrier layer on switching polarity of ZrO2-based conducting-bridge random access memoryChandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Tsai, Tsung-Ling; Lin, Chun-An; Tseng, Tseung-Yuen; 資訊工程學系; 電子工程學系及電子研究所; Department of Computer Science; Department of Electronics Engineering and Institute of Electronics
1-Nov-2019Enhanced Synaptic Linearity in ZnO-Based Invisible Memristive Synapse by Introducing Double Pulsing SchemeChandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Panda, Debashis; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; 電機工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Electrical and Computer Engineering
30-Aug-2018The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2-based resistive switching random access memory devicesChandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Aluguri, Rakesh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; 電機工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Electrical and Computer Engineering
1-Nov-2019Improving linearity by introducing Al in HfO2 as a memristor synapse deviceChandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Saminathan, R.; Panda, Debashis; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; 電機工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Electrical and Computer Engineering
20-Sep-2017Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cellSimanjuntak, Firman Mangasa; Chandrasekaran, Sridhar; Pattanayak, Bhaskar; Lin, Chun-Chieh; Tseng, Tseung-Yuen; 資訊工程學系; 電子工程學系及電子研究所; Department of Computer Science; Department of Electronics Engineering and Institute of Electronics
1-Dec-2017Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cellSimanjuntak, Firman Mangasa; Singh, Pragya; Chandrasekaran, Sridhar; Lumbantoruan, Franky Juanda; Yang, Chih-Chieh; Huang, Chu-Jie; Lin, Chun-Chieh; Tseng, Tseung-Yuen; 材料科學與工程學系; 資訊工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Computer Science; Department of Electronics Engineering and Institute of Electronics
19-Oct-2018Switching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization CellSimanjuntak, Firman Mangasa; Chandrasekaran, Sridhar; Lin, Chun-Chieh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; 電機工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Electrical and Computer Engineering
1-May-2019ZnO2/ZnO bilayer switching film for making fully transparent analog memristor devicesSimanjuntak, Firman Mangasa; Chandrasekaran, Sridhar; Lin, Chun-Chieh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; 電機工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Electrical and Computer Engineering