Browsing by Author Wu, Yu-Sheng

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Issue DateTitleAuthor(s)
1-Mar-2011Comparison of 4T and 6T FinFET SRAM Cells for Subthreshold Operation Considering Variability-A Model-Based ApproachFan, Ming-Long; Wu, Yu-Sheng; Hu, Vita Pi-Ho; Hsieh, Chien-Yu; Su, Pin; Chuang, Ching-Te; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009Design and Analysis of Ultra-Thin-Body SOI Based Subthreshold SRAMHu, Vita Pi-Ho; Wu, Yu-Sheng; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2014Fabrication and characteristics of a GaN-based microcavity laser with shallow etched mesaLai, Ying-Yu; Chou, Yu-Hsun; Wu, Yu-Sheng; Lan, Yu-Pin; Lu, Tien-Chang; Wang, Shing-Chung; 光電工程學系; Department of Photonics
1-Jun-2014Fabrication and characteristics of a GaN-based microcavity laser with shallow etched mesaLai, Ying-Yu; Chou, Yu-Hsun; Wu, Yu-Sheng; Lan, Yu-Pin; Lu, Tien-Chang; Wang, Shing-Chung; 光電工程學系; Department of Photonics
1-Jul-2012Impact of Quantum Confinement on Backgate-Bias Modulated Threshold-Voltage and Subthreshold Characteristics for Ultra-Thin-Body GeOI MOSFETsYu, Chang-Hung; Wu, Yu-Sheng; Hu, Vita Pi-Ho; Su, Pin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2011Impact of Quantum Confinement on Short-Channel Effects for Ultrathin-Body Germanium-on-Insulator MOSFETsWu, Yu-Sheng; Hsieh, Hsin-Yuan; Hu, Vita Pi-Ho; Su, Pin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-2012Impact of Quantum Confinement on Subthreshold Swing and Electrostatic Integrity of Ultra-Thin-Body GeOI and InGaAs-OI n-MOSFETsYu, Chang-Hung; Wu, Yu-Sheng; Hu, Vita Pi-Ho; Su, Pin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-2010Impact of Surface Orientation on the Sensitivity of FinFETs to Process Variations-An Assessment Based on the Analytical Solution of the Schrodinger EquationWu, Yu-Sheng; Su, Pin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2010Investigation of Cell Stability and Write Ability of FinFET Subthreshold SRAM Using Analytical SNM ModelFan, Ming-Long; Wu, Yu-Sheng; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te; 交大名義發表; National Chiao Tung University
1-Apr-2009Investigation of electrostatic integrity for ultra-thin-body GeOI MOSFET using analytical solution of Poisson's equationHu, Vita Pi-Ho; Wu, Yu-Sheng; Su, Pin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2008Investigation of Electrostatic Integrity for Ultra-Thin-Body GeOI MOSFET Using Analytical Solution of Poisson's EquationHu, Vita Pi-Ho; Wu, Yu-Sheng; Su, Pin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-2011Investigation of Electrostatic Integrity for Ultrathin-Body Germanium-On-Nothing MOSFETHu, Vita Pi-Ho; Wu, Yu-Sheng; Su, Pin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2008Investigation of random dopant fluctuation for multi-gate metal-oxide-semiconductor field-effect transistors using analytical solutions of three-dimensional Poisson's equationWu, Yu-Sheng; Su, Pin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2007Investigation of scaling for multi-gate MOSFETs using analytical solution of 3-D Poisson's equationWu, Yu-Sheng; Su, Pin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009Investigation of Static Noise Margin of FinFET SRAM Cells in Sub-threshold RegionFan, Ming-Long; Wu, Yu-Sheng; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009Investigation of Static Noise Margin of Ultra-Thin-Body SOI SRAM Cells in Subthreshold Region using Analytical Solution of Poisson's EquationHu, Vita Pi-Ho; Wu, Yu-Sheng; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-2010Investigation of Switching-Time Variations for Nanoscale MOSFETs Using the Effective-Drive-Current ApproachWu, Yu-Sheng; Fan, Ming-Long; Su, Pin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009Quantum Confinement Effect in Short-Channel Gate-All-Around MOSFETs and Its Impact on the Sensitivity of Threshold Voltage to Process VariationsWu, Yu-Sheng; Su, Pin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Nov-2008Sensitivity of Gate-All-Around Nanowire MOSFETs to Process Variations-A Comparison With Multigate MOSFETsWu, Yu-Sheng; Su, Pin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-2008Sensitivity of multigate MOSFETs to process variations - An assessment based on analytical solutions of 3-D Poisson's equationWu, Yu-Sheng; Su, Pin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics