Browsing by Author Wang, TH

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Issue DateTitleAuthor(s)
2003Impacts of HF etching on ultra-thin core gate oxide integrity in dual gate oxide CMOS technologyLee, DY; Lin, HC; Chen, CL; Huang, TY; Wang, TH; Lee, TL; Chen, SC; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-2001Inequalities between Dirichlet and Neumann eigenvalues for domains in spheresHsu, YJ; Wang, TH; 應用數學系; Department of Applied Mathematics
1-Feb-2001Interface induced uphill diffusion of boron: An effective approach for ultrashallow junctionWang, HCH; Wang, CC; Chang, CS; Wang, TH; Griffin, PB; Diaz, CH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-1998Investigation of oxide charge trapping and detrapping in a MOSFET by using a GIDL current techniqueWang, TH; Chang, TE; Chiang, LP; Wang, CH; Zous, NK; Huang, CM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1997Investigation of oxide charge trapping and detrapping in a n-MOSFETWang, TH; Chang, TE; Chiang, LP; Zous, NK; Huang, C; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
2005Investigation of post-NBTI stress recovery in pMOSFETs by direct measurement of single oxide charge de-trappingChan, CT; Ma, HC; Tang, CJ; Wang, TH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004Investigation of programmed charge lateral spread in a two-bit storage nitride flash memory cell by using a charge pumping techniqueGu, SH; Wang, MT; Chan, CT; Zous, NK; Yeh, CC; Tsai, WJ; Lu, TC; Wang, TH; Ku, J; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-2004Lateral migration of trapped holes in a nitride storage flash memory cell and its qualification methodologyZous, NK; Lee, MY; Tsai, WJ; Kuo, A; Huang, LT; Lu, TC; Liu, CJ; Wang, TH; Lu, WP; Ting, WC; Ku, J; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2005Mechanism for slow switching effect in advanced low-voltage, high-speed Pb(Zr1-XTiX)O-3 ferroelectric memoryTsai, CW; Lai, SC; Yen, CT; Lien, HM; Lung, HL; Wu, TB; Wang, TH; Liu, R; Lu, CY; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1996Mechanisms and characteristics of oxide charge detrapping in n-MOSFET'sWang, TH; Chang, TE; Chiang, LP; Huang, CM; Guo, JC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2006Molecular epidemiology of long-term colonization of Candida albicans strains from HIV-infected patientsLi, SY; Yang, YL; Chen, KW; Cheng, HH; Chiou, CS; Wang, TH; Lauderdale, TL; Hung, CC; Lo, HJ; 生物科技學系; Department of Biological Science and Technology
2004Multi-level memory systems using error control codesChang, HC; Lin, CC; Hsiao, TY; Wu, JT; Wang, TH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2003Negative substrate bias enhanced breakdown hardness in ultra-thin oxide pMOSFETsWang, TH; Tsai, CW; Chen, MC; Chan, CT; Chiang, HK; Lu, SH; Hu, HC; Chen, TF; Yang, CK; Lee, MT; Wu, DY; Chen, JK; Chien, SC; Sun, SW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-1996A new technique to extract oxide trap time constants in MOSFET'sWang, TH; Chang, TE; Chiang, LP; Huang, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1997A new technique to measure an oxide trap density in a hot carrier stressed n-MOSFETWang, TH; Chiang, LP; Chang, TE; Zous, NK; Shen, KY; Huang, C; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
1-Sep-2004A novel erase scheme to suppress overerasure in a scaled 2-bit nitride storage flash memory cellYeh, CC; Wang, TH; Tsai, WJ; Lu, TC; Liao, YY; Chen, HY; Zous, NK; Ting, WC; Ku, J; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-2005A novel fully CMOS process compatible PREM for SOC applicationsYeh, CC; Wang, TH; Tsai, WJ; Lu, TC; Liao, YY; Zous, NK; Chin, CY; Chen, YR; Chen, MS; Ting, WC; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2006A novel operation method to avoid overerasure in a scaled trapping-nitride localized charge storage flash memory cell and its application for multilevel programmingTsai, WJ; Zous, NK; Wang, TH; Ku, YHJ; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2005A novel PHINES flash memory cell with low power program/erase, small pitch, two-bits-per-cell for data storage applicationsYeh, CC; Wang, TH; Tsai, WJ; Lu, TC; Chen, MS; Liao, YY; Ting, WC; Ku, YHJ; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2003A novel soft-program for a narrow erased state Vt distribution, read disturbance suppression and over-program annihilation in multilevel cell flash memoriesYeh, CC; Fan, TH; Lu, TC; Wang, TH; Pan, S; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics