Browsing by Author TSAI, KL

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Showing results 3 to 19 of 19 < previous 
Issue DateTitleAuthor(s)
1-Feb-19952-DIMENSIONAL BI-PERIODIC GRATING-COUPLED ONE-COLOR AND 2-COLOR QUANTUM-WELL INFRARED PHOTODETECTORSTSAI, KL; LEE, CP; TSANG, JS; CHEN, HR; CHANG, KH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2-May-1994ASYMMETRIC DARK CURRENT IN QUANTUM-WELL INFRARED PHOTODETECTORSTSAI, KL; LEE, CP; CHANG, KH; LIU, DC; CHEN, HR; TSANG, JS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-1994COMPOSITION MODULATION OF INXGA1-XAS QUANTUM-WELLS BY FAST DIMER ARSENIC FLUX CHANGE USING VALVED ARSENIC CRACKERLIU, DC; LEE, CP; TSAI, KL; TSANG, JS; CHEN, HR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-1995COMPOSITIONAL DISORDERING OF ALGAAS/GAAS SUPERLATTICES BY USING THE LOW-TEMPERATURE-GROWN GAASTSANG, JS; LEE, CP; FAN, JC; TSAI, KL; CHEN, HR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
14-Oct-1993CURRENT GAINS OF ALAS/GAAS TUNNELING EMITTER BIPOLAR-TRANSISTORS WITH 25-500-ANGSTROM BARRIER THICKNESSCHEN, HR; LEE, CP; CHANG, CY; TSAI, KL; TSANG, JS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-1995EFFECTS OF LOW-TEMPERATURE-GROWN GAAS LAYER ON COMPOSITIONAL DISORDERING OF ALGAAS/GAAS SUPERLATTICESTSANG, JS; LEE, CP; FAN, JC; LEE, SH; TSAI, KL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-1993EVIDENCE OF ZERO POTENTIAL SPIKE ENERGY IN ALGAAS GAAS HETEROSTRUCTURE EMITTER BIPOLAR-TRANSISTORSCHEN, HR; LEE, CP; CHANG, CY; TSAI, KL; TSANG, JS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-1993FUNDAMENTAL MODE-OPERATION OF HIGH-POWER INGAAS/GAAS/ALGAAS LASER ARRAYSTSANG, JS; LIOU, DC; TSAI, KL; CHEN, HR; TSAI, CM; LEE, CP; JUANG, FY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-1994HETEROJUNCTION BIPOLAR-TRANSISTORS WITH EMITTER BARRIER LOWERED BY DELTA-DOPINGCHEN, HR; HUANG, CH; CHANG, CY; LEE, CP; TSAI, KL; TSANG, JS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-1994INFLUENCE OF OXYGEN ON THE PERFORMANCE OF GAAS/ALGAAS QUANTUM-WELL INFRARED PHOTODETECTORSTSAI, KL; LEE, CP; CHANG, KH; CHEN, HR; TSANG, JS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-Sep-1992INFLUENCE OF THIN PROTECTIVE INAS LAYERS ON THE OPTICAL-QUALITY OF ALGAAS AND QUANTUM-WELLSTSAI, KL; CHANG, KH; LEE, CP; HUANG, KF; CHANG, Y; FAN, JC; LIU, DG; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-Oct-1993INVESTIGATION OF INDIUM DOPING IN INGAAS GAAS ALGAAS GRADED-INDEX SEPARATED CONFINEMENT HETEROSTRUCTURE LASERSTSANG, JS; LEE, CP; LIU, DC; CHEN, HR; TSAI, KL; TSAI, CM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-1995KINETICS OF COMPOSITIONAL DISORDERING OF ALGAAS/GAAS QUANTUM-WELLS INDUCED BY LAW-TEMPERATURE GROWN GAASTSANG, JS; LEE, CP; LEE, SH; TSAI, KL; CHEN, HR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-1993NOVEL ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FABRICATED BY 2-STAGE MOLECULAR-BEAM EPITAXYCHEN, HR; CHANG, CY; TSAI, KL; TSANG, JS; LEE, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-Jul-1993THE STUDY OF EMITTER THICKNESS EFFECT ON THE HETEROSTRUCTURE EMITTER BIPOLAR-TRANSISTORSCHEN, HR; LEE, CP; CHANG, CY; TSANG, JS; TSAI, KL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Nov-1992TRANSIENT ANALYSIS OF AN ASYMMETRIC ROTOR-BEARING SYSTEM DURING ACCELERATIONLEE, AC; KANG, Y; TSAI, KL; HSIAO, KM; 交大名義發表; 機械工程學系; National Chiao Tung University; Department of Mechanical Engineering
3-Mar-1994VERTICAL INTEGRATION OF A GAAS/ALGAAS QUANTUM-WELL LASER AND A LONG-WAVELENGTH QUANTUM-WELL INFRARED PHOTODETECTORTSANG, JS; LEE, CP; TSAI, KL; CHEN, HR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics