Browsing by Author Sze, Simon M.

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Issue DateTitleAuthor(s)
26-Oct-2017Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation TreatmentYuan, Fang-Yuan; Deng, Ning; Shih, Chih-Cheng; Tseng, Yi-Ting; Chang, Ting-Chang; Chang, Kuan-Chang; Wang, Ming-Hui; Chen, Wen-Chung; Zheng, Hao-Xuan; Wu, Huaqiang; Qian, He; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
26-Sep-2016Confirmation of filament dissolution behavior by analyzing electrical field effect during reset process in oxide-based RRAMPan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Lin, Wen-Yan; Chen, Min-Chen; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2019Contact Engineering of Trilayer Black Phosphorus With Scandium and GoldTsai, Yi-Chia; Magyari-Kope, Blanka; Li, Yiming; Samukawa, Seiji; Nishi, Yoshio; Sze, Simon M.; 交大名義發表; 電子工程學系及電子研究所; 電機工程學系; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics; Department of Electrical and Computer Engineering
10-Sep-2012Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatmentTsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Syu, Yong-En; Liao, Kuo-Hsiao; Tseng, Bae-Heng; Sze, Simon M.; 電子工程學系及電子研究所; 腦科學研究中心; Department of Electronics Engineering and Institute of Electronics; Brain Research Center
1-Oct-2018The Demonstration of Increased Selectivity During Experimental Measurement in Filament-Type Vanadium Oxide-Based SelectorChen, Chun-Kuei; Lin, Chih-Yang; Chen, Po-Hsun; Chang, Ting-Chang; Shih, Chih-Cheng; Tseng, Yi-Ting; Zheng, Hao-Xuan; Chen, Ying-Chen; Chang, Yao-Feng; Lin, Chun-Chu; Huang, Hui-Chun; Huang, Wei-Chen; Wang, Hao; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
14-Apr-2014Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistorsYang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Chu, Ann-Kuo; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Nov-2014Effect of Annealing on Defect Elimination for High Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film TransistorFuh, Chur-Shyang; Liu, Po-Tsun; Huang, Wei-Hsun; Sze, Simon M.; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
1-May-2017Effect of charge quantity on conduction mechanism of high-and low-resistance states during forming process in a one-transistor-one-resistor resistance random access memoryWu, Cheng-Hsien; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Pan, Chih-Hung; Su, Yu-Ting; Chen, Po-Hsun; Lin, Shih-Kai; Hu, Shih-Jie; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Mar-2016Effect of different constant compliance current for hopping conduction distance properties of the Sn:SiOx thin film RRAM devicesChen, Kai-Huang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Liao, Kuo-Hsiao; Syu, Yong-En; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2013Effect of Electrode Material on Resistive Switching Characteristics in TaON Nonvolatile Memory DevicesChen, Min-Chen; Chang, Ting-Chang; Chiu, Yi-Chieh; Chen, Shih-Cheng; Huang, Sheng-Yao; Syu, Yong-En; Chang, Kuan-Chang; Huang, Hui-Chun; Tsai, Tsung-Ming; Gan, Der-Shin; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
20-May-2013The effect of high/low permittivity in bilayer HfO2/BN resistance random access memoryHuang, Jen-Wei; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Lou, J. C.; Young, Tai-Fa; Chen, Jung-Hui; Chen, Hsin-Lu; Pan, Yin-Chih; Huang, Xuan; Zhang, Fengyan; Syu, Yong-En; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
30-Aug-2018Effect of interfacial layer on device performance of metal oxide thin-film transistor with a multilayer high-k gate stackRuan, Dun-Bao; Liu, Po-Tsun; Chiu, Yu-Chuan; Kuo, Po-Yi; Yu, Min-Chin; Kan, Kai-Zhi; Chien, Ta-Chun; Chen, Yi-Heng; Sze, Simon M.; 電子工程學系及電子研究所; 光電工程學系; 光電工程研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of EO Enginerring
2012The Effect of Silicon Oxide Based RRAM with Tin DopingChang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Syu, Yong-En; Chuang, Siang-Lan; Li, Cheng-Hua; Gan, Der-Shin; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2012The Effect of Silicon Oxide Based RRAM with Tin Doping (vol 15, pg H65, 2012)Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Syu, Yong-En; Liao, Kuo-Hsiao; Chuang, Siang-Lan; Li, Cheng-Hua; Gan, Der-Shin; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2011Effect of Top Electrode Material on Resistive Switching Characteristics in MnO2 Nonvolatile Memory DevicesTsai, Yu-Ting; Chang, Ting-Chang; Lin, Chao-Cheng; Chiang, Lan-Shin; Chen, Shih-Cheng; Sze, Simon M.; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Mar-2016Effects of erbium doping of indium tin oxide electrode in resistive random access memoryChen, Po-Hsun; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Lin, Chih-Yang; Jin, Fu-Yuan; Chen, Min-Chen; Huang, Hui-Chun; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-2013Effects of Microwave Annealing on Nitrogenated Amorphous In-Ga-Zn-O Thin-Film Transistor for Low Thermal Budget Process ApplicationFuh, Chur-Shyang; Liu, Po-Tsun; Teng, Li-Feng; Huang, Sih-Wei; Lee, Yao-Jen; Shieh, Han-Ping D.; Sze, Simon M.; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
Oct-2016Effects of Nitrogen on Amorphous Nitrogenated InGaZnO (a-IGZO:N) Thin Film TransistorsLiu, Po-Tsun; Chang, Chih-Hsiang; Fuh, Chur-Shyang; Liao, Yu-Tei; Sze, Simon M.; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
1-Jun-2015Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access MemoryLin, Chih-Yang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Zhang, Rui; Liu, Kuan-Hsien; Chen, Hua-Mao; Tseng, Yi-Ting; Hung, Ya-Chi; Syu, Yong-En; Zheng, Jin-Cheng; Wang, Ying-Lang; Zhang, Wei; Sze, Simon M.; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
1-Oct-2018Efficient Implementation of Boolean and Full-Adder Functions With 1T1R RRAMs for Beyond Von Neumann In-Memory ComputingWang, Zhuo-Rui; Li, Yi; Su, Yu-Ting; Zhou, Ya-Xiong; Cheng, Long; Chang, Ting-Chang; Xue, Kan-Hao; Sze, Simon M.; Miao, Xiang-Shui; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics