Browsing by Author Pan, YC

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Showing results 3 to 17 of 17 < previous 
Issue DateTitleAuthor(s)
2000Gallium K-edge EXAFS study of GaN : Mg filmsPan, YC; Wang, SF; Lee, WH; Lin, WC; Shu, CK; Chiang, CI; Lin, CH; Chang, H; Lee, JF; Jang, LY; Lin, DS; Lee, MC; Chen, WH; Chen, WK; 電子物理學系; Department of Electrophysics
1-Jan-2001Gallium K-edge x-ray absorption study on Mg-doped GaNPan, YC; Wang, SF; Lee, WH; Lee, MC; Chen, WK; Chen, WH; Jang, LY; Lee, JF; Chiang, CI; Chang, H; Wu, KT; Lin, DS; 電子物理學系; 物理研究所; Department of Electrophysics; Institute of Physics
15-Dec-1997Growth and X-ray characterization of an InN film on sapphire prepared by metalorganic vapor phase epitaxyChen, WK; Pan, YC; Lin, HC; Ou, J; Chen, WH; Lee, MC; 電子物理學系; Department of Electrophysics
15-Dec-1997Growth and X-ray characterization of an InN film on sapphire prepared by metalorganic vapor phase epitaxyChen, WK; Pan, YC; Lin, HC; Ou, J; Chen, WH; Lee, MC; 電子物理學系; Department of Electrophysics
1-Sep-1999A high-temperature thermodynamic model for metalorganic vapor phase epitaxial growth of InGaNOu, J; Pan, YC; Lee, WH; Shu, CK; Lin, HC; Lee, MC; Chen, WH; Chiang, CI; Chang, H; Chen, WK; 電子物理學系; Department of Electrophysics
1-Feb-1999Influence of sapphire nitridation on properties of indium nitride prepared by metalorganic vapor phase epitaxyPan, YC; Lee, WH; Shu, CK; Lin, HC; Chiang, CI; Chang, H; Lin, DS; Lee, MC; Chen, WK; 電子物理學系; 物理研究所; Department of Electrophysics; Institute of Physics
1-Oct-2001Long-term photocapacitance decay behavior in undoped GaNChung, HM; Pan, YC; Chuang, WC; Chen, NC; Tsai, CC; Lee, MC; Chen, WH; Chen, WK; 電子物理學系; Department of Electrophysics
2000Long-term photocapacitance decay behavior in undoped GaNChung, HM; Pan, YC; Chung, WC; Chen, NC; Tsai, CC; Chiang, CI; Lin, CH; Chang, H; Lee, MC; Chen, WH; Chen, WK; 電子物理學系; Department of Electrophysics
1-Apr-2001Luminescence intensity reduction in Mg-doped GaN grown by metalorganic chemical vapor phase epitaxyShu, CK; Chen, HH; Lee, WH; Pan, YC; Huang, HY; Ou, JN; Chen, WK; Chen, WH; Lee, MC; 電子物理學系; Department of Electrophysics
2000Metastable photoluminescence in heavily Mg-doped GaN grown by metalorganic chemical vapor phase epitaxyShu, CK; Lee, WH; Pan, YC; Huang, HY; Chen, HH; Chen, WH; Chen, WK; Lee, MC; 電子物理學系; Department of Electrophysics
2000Optical and electrical investigations of isoelectronic In-doped GaN filmsShu, CK; Lee, WH; Pan, YC; Chen, CC; Lin, HC; Ou, J; Chen, WH; Chen, WK; Lee, MC; 電子物理學系; Department of Electrophysics
6-May-2002Photoluminescence and photoluminescence excitation studies of as-grown and P-implanted GaN: On the nature of yellow luminescenceHuang, HY; Chuang, CH; Shu, CK; Pan, YC; Lee, WH; Chen, WK; Chen, WH; Lee, MC; 電子物理學系; Department of Electrophysics
1-Sep-1998Raman and X-ray studies of InN films grown at different temperatures by metalorganic vapor phase epitaxyChen, WK; Lin, HC; Pan, YC; Ou, J; Shu, CK; Chen, WH; Lee, MC; 電子物理學系; Department of Electrophysics
2-Nov-1998Raman and x-ray studies of InN films grown by metalorganic vapor phase epitaxyLee, MC; Lin, HC; Pan, YC; Shu, CK; Ou, J; Chen, WH; Chen, WK; 電子物理學系; Department of Electrophysics
2001Structure study of GaN : Mg films by X-ray absorption near-edge structure spectroscopyPan, YC; Wang, SF; Lee, WH; Lin, WC; Chiang, CI; Chang, H; Hsieh, HH; Chen, JM; Lin, DS; Lee, MC; Chen, WK; Chen, WH; 電子物理學系; 物理研究所; Department of Electrophysics; Institute of Physics