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Issue DateTitleAuthor(s)
1-Nov-1994ANOMALOUS REVERSE SHORT-CHANNEL EFFECT IN P+ POLYSILICON GATED P-CHANNEL MOSFETCHANG, CY; LIN, CY; CHOU, JW; HSU, CCH; PAN, HT; KO, J; 電控工程研究所; 奈米中心; Institute of Electrical and Control Engineering; Nano Facility Center
1980BARRIER HEIGHT REDUCTION OF THE SCHOTTKY-BARRIER DIODE USING A THIN HIGHLY DOPED SURFACE-LAYERWU, CY; 電控工程研究所; 奈米中心; Institute of Electrical and Control Engineering; Nano Facility Center
1999Characterization and lithographic parameters extraction for the modified resistsKo, FH; Lu, JK; Chu, TC; Huang, TY; Yang, CC; Sheu, JT; Huang, HL; 奈米中心; Nano Facility Center
2000Characterization and modeling of out-diffusion of cesium, manganese and zinc impurities from deep ultraviolet photoresistKo, FH; Wang, MY; Wang, TK; Yang, CC; Huang, TY; Wu, CS; 奈米中心; Nano Facility Center
1-Sep-1999Characterization and modeling of out-diffusion of manganese and zinc impurities from deep ultraviolet photoresistWang, MY; Ko, FH; Wang, TK; Yang, CC; Huang, TY; 奈米中心; Nano Facility Center
1-May-2001Characterization and modeling of the metal diffusion from deep ultraviolet photoresist and silicon-based substrateWang, TK; Wang, MY; Ko, FH; Tseng, CL; 奈米中心; Nano Facility Center
1995Characterization and optimization of NO-nitrided gate oxide by RTPSun, SC; Chen, CH; Yen, DLW; Lin, CJ; 奈米中心; Nano Facility Center
1-Feb-1996Characterization of anodic aluminum oxide film and its application to amorphous silicon thin film transistorsLiang, CW; Luo, TC; Feng, MS; Cheng, HC; Su, D; 材料科學與工程學系; 電子工程學系及電子研究所; 奈米中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
1994CHARACTERIZATION OF CHEMICAL-MECHANICAL POLISHING DIELECTRICS FOR MULTILEVEL METALLIZATIONSUN, SC; YEH, FL; TIEN, HZ; 奈米中心; Nano Facility Center
1-Sep-1995CHARACTERIZATION OF THE CHEMICAL-MECHANICAL POLISHING PROCESS-BASED ON NANOINDENTATION MEASUREMENT OF DIELECTRIC FILMSLIU, CW; DAI, BT; YEH, CF; 電子工程學系及電子研究所; 奈米中心; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
1-May-2001Characterization of ultrathin oxynitride (18-21 angstrom) gate dielectrics by NH3 nitridation and N2O RTA treatmentPan, TM; Lei, TF; Wen, HC; Chao, TS; 電子工程學系及電子研究所; 奈米中心; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
1-Nov-2012Characterizations of polycrystalline silicon nanowire thin-film transistors enhanced by metal-induced lateral crystallizationSu, Chun-Jung; Huang, Yu-Feng; Lin, Horng-Chih; Huang, Tiao-Yuan; 電子工程學系及電子研究所; 奈米中心; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
1-Mar-1997Chemical-mechanical polishing and material characteristics of plasma-enhanced chemically vapor deposited fluorinated oxide thin filmsTseng, WT; Hsieh, YT; Lin, CF; Tsai, MS; Feng, MS; 材料科學與工程學系; 奈米中心; Department of Materials Science and Engineering; Nano Facility Center
1995A comparative study of CVD TiN and CVD TaN diffusion barriers for copper interconnectionSun, SC; Tsai, MH; Chiu, HT; Chuang, SH; Tsai, CE; 奈米中心; Nano Facility Center
15-Dec-1994COMPARISON OF CHEMICAL-VAPOR-DEPOSITION OF TIN USING TETRAKIS-DIETHYLAMINO-TITANIUM AND TETRAKIS-DIMETHYLAMINO-TITANIUMSUN, SC; TSAI, MH; 交大名義發表; 奈米中心; National Chiao Tung University; Nano Facility Center
2015Comparison of Electrical Characteristics of N-type Silicon Junctionless Transistors with and without Film Profile Engineering by TCAD SimulationTsai, Jung-Ruey; Lin, Horng-Chih; Chang, Hsiu-Fu; Shie, Bo-Shiuan; Wen, Ting-Ting; Huang, Tiao-Yuan; 電子工程學系及電子研究所; 奈米中心; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
1-May-1996Comparison of the diffusion barrier properties of chemical-vapor-deposited TaN and sputtered TaN between Cu and SiTsai, MH; Sun, SC; Tsai, CE; Chuang, SH; Chiu, HT; 應用化學系; 電子工程學系及電子研究所; 奈米中心; Department of Applied Chemistry; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
1-Sep-1989COMPOSITIONAL DEPENDENCE OF THERMAL-STABILITY OF REFRACTORY-METAL SILICIDE SCHOTTKY CONTACTS TO GAASLEE, CP; LIU, TH; WU, SC; 奈米中心; Nano Facility Center
1-Dec-2004CoTiO3 high-kappa, dielectrics on HSG for DRAM applicationsChao, TS; Ku, WM; Lin, HC; Landheer, D; Wang, YY; Mori, Y; 奈米中心; Nano Facility Center
1980CURRENT GAIN OF HIGH-LOW JUNCTION EMITTER BIPOLAR-TRANSISTOR STRUCTURE WITH UNIFORMLY DOPED PROFILESWU, CY; 電控工程研究所; 奈米中心; Institute of Electrical and Control Engineering; Nano Facility Center