Browsing by Author Lin, K. C.

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Showing results 3 to 9 of 9 < previous 
Issue DateTitleAuthor(s)
14-Oct-2009Fluorescence signals of quantum dots influenced by spatially controlled array structuresChou, J. W.; Lin, K. C.; Tang, Y. T.; Hsueh, F. K.; Lee, Yao-Jen; Luo, C. W.; Chen, Y. N.; Yuan, C. T.; Shih, Hsun-Chuan; Fan, W. C.; Lin, M. C.; Chou, W. C.; Chuu, D. S.; 電子物理學系; Department of Electrophysics
2010Growth and Field Emission Characteristics of Pillar-like Carbon Nanotubes Using Co-Ti/Al Co-deposited Catalysts at Low TemperatureChang, C. T.; Lee, C. Y.; Lin, K. C.; Lai, R. L.; Tsai, Wan-Lin; Chien, Yun-Shan; Juan, C. P.; Lee, I. C.; Yang, P. Y.; Wei, I. Z.; Cheng, H. C.; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
1-Jan-2010Improved Field Emission Characteristics with different Electrode Materials by forming process in a Quasi-planar Thin Film Field Emission DiodeChang, C. T.; Hsu, Y. Y.; Lin, K. C.; Tsai, Wan-Lin; Chien, Yun-Shan; Juan, C. P.; Lee, I. C.; Yang, P. Y.; Cheng, H. C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
11-Nov-2009Nanocontact resistance and structural disorder induced resistivity variation in metallic metal-oxide nanowiresLin, Y. F.; Wu, Z. Y.; Lin, K. C.; Chen, C. C.; Jian, W. B.; Chen, F. R.; Kai, J. J.; 電子物理學系; Department of Electrophysics
Jun-2016Seismic analysis of underground tunnels by the 2.5D finite/infinite element approachLin, K. C.; Hung, H. H.; Yang, Judy P.; Yang, Y. B.; 土木工程學系; Department of Civil Engineering
2008Trapping and de-trapping characteristics in PBTI and dynamic PBTI between HfO2 and HfSiON gate dielectricsLin, We-Liang; Lee, Yao-Jen; Lo, Wen-Cheng; Chen, King-Sheng; Hou, Y. T.; Lin, K. C.; Chao, Tien-Sheng; 電子物理學系; Department of Electrophysics
2009UV photodetectors with lateral self-assembled ZnO nanowires grown at low temperatureYang, P. Y.; Lee, I. C.; Chang, C. T.; Lin, K. C.; Wang, J. L.; Cheng, K. J.; Lin, C. C.; Cheng, H. C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics