Browsing by Author Huang, Guo-Wei

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Issue DateTitleAuthor(s)
20155.8 GHz 4.7 mA Zero-IF Passive Mixer Receiver Using a Step-Down Transformer for Gain EnhancementChang, Wei-Ling; Meng, Chinchun; Lin, Chung-Yo; Huang, Guo-Wei; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
201460-GHz 0.18-mu m CMOS Schottky-Diode Ring-Mixer Down-ConverterHsiao, Yu-Chih; Meng, Chinchun; Wang, Ta-Wei; Huang, Guo-Wei; 電機學院; College of Electrical and Computer Engineering
201360-GHz Dual-Conversion Down-Converter Using Schottky Diode and Dual-Band Rat-Race Coupler in Standard 0.18-mu m CMOS ProcessHsiao, Yu-Chih; Meng, Chinchun; Wei, Hung-Ju; Wang, Ta-Wei; Huang, Guo-Wei; 電機資訊學士班; Undergraduate Honors Program of Electrical Engineering and Computer Science
201660-GHz SiGe BiCMOS Dual-Conversion Down-Converter: Schottky Diode RF Mixer and Analog Gilbert IF Mixer with Microwave Quadrature GeneratorKao, Jen-Chieh; Meng, Chinchun; Wei, Hung-Ju; Huang, Guo-Wei; 電機工程學系; Department of Electrical and Computer Engineering
2008A 9-GHz Dual-Modulus 0.18-mu m CMOS Prescaler Using HLO-FF TechniqueWei, Hung-Ju; Meng, Chinchun; Lin, Yi-Chen; Huang, Guo-Wei; 電信工程研究所; Institute of Communications Engineering
1-Jan-20149.9-mA 5-6 GHz CMOS Sub-Harmonic Direct-Conversion Receiver Using Deep N-Well BJTChang, Wei-Ling; Meng, Chin-Chun; Syu, Jin-Siang; Wang, Chia-Ling; Huang, Guo-Wei; 電機工程學系; Department of Electrical and Computer Engineering
1-Oct-2018Analog and RF Characteristics of Power FinFET Transistors With Different Drain-Extension DesignsChen, Bo-Yuan; Chen, Kun-Ming; Chiu, Chia-Sung; Huang, Guo-Wei; Chen, Hsiu-Chih; Chen, Chun-Chi; Hsueh, Fu-Kuo; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
2005An analysis of base current effect on the anomalous dip of scattering parameter S(12) in SiGeHBTsChen, Han-Yu; Chen, Kun-Ming; Huang, Guo-Wei; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2008Analysis of temperature effects on high-frequency characteristics of RF lateral-diffused metal-oxide-semiconductor transistorsHu, Hsin-Hui; Chen, Kun-Ming; Huang, Guo-Wei; Chien, Alex; Cheng, Eric; Yang, Yu-Chi; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2007Broadband GaInP/GaAs HBT regenerative frequency divider with active loadsWei, Hung-Ju; Meng, Chinchun; Chang, YuWen; Huang, Guo-Wei; 電信工程研究所; Institute of Communications Engineering
1-Mar-2011Capacitance Characteristics Improvement and Power Enhancement for RF LDMOS Transistors Using Annular Layout StructureChiu, Chia-Sung; Chen, Kun-Ming; Huang, Guo-Wei; Chen, Ming-I.; Yang, Yu-Chi; Wang, Kai-Li; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-2013Channel Thickness Effect on High-Frequency Performance of Poly-Si Thin-Film TransistorsChen, Kun-Ming; Tsai, Tzu-I; Lin, Ting-Yao; Lin, Horng-Chih; Chao, Tien-Sheng; Huang, Guo-Wei; Huang, Tiao-Yuan; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
2009Characterization of Annular-Structure RF LDMOS Transistors Using Polyharmonic Distortion ModelChiu, Chia-Sung; Chen, Kun-Ming; Huang, Guo-Wei; Hsiao, Chih-Hua; Liao, Kuo-Hsiang; Chen, Wen-Lin; Wang, Sheng-Chiun; Chen, Ming-Yi; Yang, Yu-Chi; Wang, Kai-Li; Wu, Lin-Kun; 電信工程研究所; Institute of Communications Engineering
1-Apr-2007Characterization of RF lateral-diffused metal-oxide-semiconductor field-effect transistors with different layout structuresHu, Hsin-Hui; Chen, Kun-Ming; Huang, Guo-Wei; Chang, Chun-Yen; Lu, Yii-Chian; Yang, Yu-Chi; Cheng, Eric; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-2008Compact CPW-MS-CPW two-stage pHEMT amplifier compatible with flip chip technique in V-band frequenciesSu, Jen-Yi; Meng, Chinchun; Lee, Yueh-Ting; Huang, Guo-Wei; 電信工程研究所; Institute of Communications Engineering
2007Compact GaInP/GaAs HBT Gilbert Mixers With On-Chip Active LO BalunWu, Tzung-Han; Lin, Yi-Chen; Meng, Chinchun; Wu, Tse-Hung; Wei, Hung-Ju; Huang, Guo-Wei; 電信工程研究所; Institute of Communications Engineering
1-Feb-2008Comparison of GaInP/GaAs HBT RFDs with resistive loads and shunt-shunt feedback active loadsWei, Hung-Ju; Meng, Chinchun; Chang, Yuwen; Huang, Guo-Wei; 電信工程研究所; Institute of Communications Engineering
1-Sep-2008Comparison of wideband Gilbert micromixers using SiGe HBT and GaInP/GaAs HBT technologiesSyu, Jin-Siang; Meng, Chinchun; Wu, Chih-Kai; Huang, Guo-Wei; 電信工程研究所; Institute of Communications Engineering
2010Comparison on mHEMT Q-Band Sub-Harmonic Mixers With/Without Delay CompensationSyu, Jin-Siang; Meng, Chinchun; Su, Jen-Yi; Huang, Guo-Wei; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2010Comprehensive Noise Characterization and Modeling for 65-nm MOSFETs for Millimeter-Wave ApplicationsWang, Sheng-Chun; Su, Pin; Chen, Kun-Ming; Liao, Kuo-Hsiang; Chen, Bo-Yuan; Huang, Sheng-Yi; Hung, Cheng-Chou; Huang, Guo-Wei; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics