Browsing by Author Huang, Chun-Yang

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Showing results 3 to 15 of 15 < previous 
Issue DateTitleAuthor(s)
28-Jul-2010High-speed and localized resistive switching characteristics of double-layer SrZrO(3) memory devicesLin, Meng-Han; Wu, Ming-Chi; Huang, Chun-Yang; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
28-Jul-2010High-speed and localized resistive switching characteristics of double-layer SrZrO3 memory devicesLin, Meng-Han; Wu, Ming-Chi; Huang, Chun-Yang; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2013Improved Resistive Switching Characteristics by Al2O3 Layers Inclusion in HfO2-Based RRAM DevicesHuang, Chun-Yang; Jieng, Jheng-Hong; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
14-May-2015Investigation of thermal stability and reliability of HfO2 based resistive random access memory devices with cross-bar structureChand, Umesh; Huang, Kuan-Chang; Huang, Chun-Yang; Ho, Chia-Hua; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-2014Mechanism of High Temperature Retention Property (up to 200 degrees C) in ZrO2-Based Memory Device With Inserting a ZnO Thin LayerChand, Umesh; Huang, Chun-Yang; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Nov-2015Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier LayerChand, Umesh; Huang, Kuan-Chang; Huang, Chun-Yang; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
16-Nov-2015Metal induced crystallized poly-Si-based conductive bridge resistive switching memory device with one transistor and one resistor architectureChand, Umesh; Huang, Chun-Yang; Kumar, Dayanand; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
12-Mar-2012Resistive switching characteristics of nickel silicide layer embedded HfO2 filmPanda, Debashis; Huang, Chun-Yang; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2014Resistive switching characteristics of Pt/CeOx/TiN memory deviceIsmail, Muhammad; Talib, Ijaz; Huang, Chun-Yang; Hung, Chung-Jung; Tsai, Tsung-Ling; Jieng, Jheng-Hong; Chand, Umesh; Lin, Chun-An; Ahmed, Ejaz; Rana, Anwar Manzoor; Nadeem, Muhammad Younus; Tseng, Tseung-Yuen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Jan-2014STABLE RESISTIVE SWITCHING CHARACTERISTICS OF Al2O3 LAYERS INSERTED IN HfPO2 BASED RRAM DEVICESHuang, Chun-Yang; Jieng, Jheng-Hong; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
13-Apr-2015Suppression of endurance degradation by utilizing oxygen plasma treatment in HfO2 resistive switching memoryChand, Umesh; Huang, Chun-Yang; Jieng, Jheng-Hong; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
10-Feb-2014Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large enduranceHuang, Chun-Yang; Huang, Chung-Yu; Tsai, Tsung-Ling; Lin, Chun-An; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2014高可靠度特性的過渡金屬氧化物電阻式記憶體製作與特性研究黃駿揚; Huang, Chun-Yang; 曾俊元; Tseng, Tseung-Yuen; 電子工程學系 電子研究所