Browsing by Author Hsieh, E. R.

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Showing results 21 to 35 of 35 < previous 
Issue DateTitleAuthor(s)
2016A New Variation Plot to Examine the Interfacial-dipole Induced Work-function Variation in Advanced High-k Metal-gate CMOS DevicesHsieh, E. R.; Wang, Y. D.; Chung, Steve S.; Ke, J. C.; Yang, C. W.; Hsu, S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2017A Novel Design of P-N Staggered Face-tunneling TFET Targeting for Low Power and Appropriate Performance ApplicationsHsieh, E. R.; Fan, Y. C.; Chang, K. Y.; Liu, C. H.; Chien, C. H.; Chung, Steve S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2016A Novel One Transistor Non-volatile Memory Feasible for NOR and NAND Applications in IoT EraChung, Steve S.; Hsieh, E. R.; Yang, S. P.; Chuang, C. H.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2016A Novel One Transistor Resistance-Gate Nonvolatile MemoryChung, Steve S.; Hsieh, E. R.; Yang, S. P.; Chuang, C. H.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2018A Novel ReWritable One-Time-Programming OTP (RW-OTP) Realized by Dielectric-fuse RRAM Devices Featuring Ultra-High Reliable Retention and Good Endurance for Embedded ApplicationsCheng, H. W.; Hsieh, E. R.; Huang, Z. H.; Chuang, C. H.; Chen, C. H.; Li, F. L.; Lo, Y. M.; Liu, C. H.; Chung, Steve S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2014The Observation of BTI-induced RTN Traps in Inversion and Accumulation Modes on HfO2 High-k Metal Gate 28nm CMOS DevicesWu, P. C.; Hsieh, E. R.; Lu, P. Y.; Chung, Steve S.; Chang, K. Y.; Liu, C. H.; Ke, J. C.; Yang, C. W.; Tsai, C. T.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-2010The proximity of the strain induced effect to improve the electron mobility in a silicon-carbon source-drain structure of n-channel metal-oxide-semiconductor field-effect transistorsHsieh, E. R.; Chung, Steve S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2015The RTN Measurement Technique on Leakage Path Finding in Advanced High-k Metal Gate CMOS DevicesHsieh, E. R.; Lu, P. Y.; Chung, Steve S.; Ke, J. C.; Yang, C. W.; Tsai, C. T.; Yew, T. R.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-2012Suppressing Device Variability by Cryogenic Implant for 28-nm Low-Power SoC ApplicationsYang, C. L.; Tsai, C. H.; Li, C. I.; Tzeng, C. Y.; Lin, G. P.; Chen, W. J.; Chin, Y. L.; Liao, C. I.; Chan, M.; Wu, J. Y.; Hsieh, E. R.; Guo, B. N.; Lu, S.; Colombeau, B.; Chung, S. S.; Chen, I. C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
28-May-2016A theoretical and experimental evaluation of surface roughness variation in trigate metal oxide semiconductor field effect transistorsHsieh, E. R.; Chung, Steve S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2012The Understanding of Multi-level RTN in Trigate MOSFETs Through the 2D Profiling of Traps and Its Impact on SRAM Performance: A New Failure Mechanism FoundHsieh, E. R.; Tsai, Y. L.; Chung, Steve S.; Tsai, C. H.; Huang, R. M.; Tsai, C. T.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2010The Understanding of Strain-Induced Device Degradation in Advanced MOSFETs with Process-Induced Strain Technology of 65nm Node and BeyondLin, M. H.; Hsieh, E. R.; Chung, Steve S.; Tsai, C. H.; Liu, P. W.; Lin, Y. H.; Tsai, C. T.; Ma, G. H.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2013The Understanding of the Bulk Trigate MOSFET's Reliability Through the Manipulation of RTN TrapsHsieh, E. R.; Wu, P. C.; Chung, Steve S.; Tsai, C. H.; Huang, R. M.; Tsai, C. T.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
19-May-2014The understanding of the drain-current fluctuation in a silicon-carbon source-drain strained n-channel metal-oxide-semiconductor field-effect transistorsHsieh, E. R.; Chung, Steve S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
14-Dec-2015The understanding on the evolution of stress-induced gate leakage in high-k dielectric metal-oxide-field-effect transistor by random-telegraph-noise measurementHsieh, E. R.; Chung, Steve S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics