Browsing by Author Feng, MS

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Issue DateTitleAuthor(s)
1-Jul-1996Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance methodChen, JF; Chen, NC; Huang, WY; Lee, WI; Feng, MS; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
1-Jul-1996Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance methodChen, JF; Chen, NC; Huang, WY; Lee, WI; Feng, MS; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
1-May-2005Aplication of plasma immersion ion implantation on seeding copper electroplating for multilevel interconnectionChiu, SY; Wang, YL; Chang, SC; Feng, MS; 材料科學與工程學系; Department of Materials Science and Engineering
15-Nov-2003The application of electrochemical metrologies for investigating chemical mechanical polishing of Al with a Ti barrier layerChiu, SY; Wang, YL; Liu, CP; Lan, JK; Ay, C; Feng, MS; Tsai, MS; Dai, BT; 材料科學與工程學系; Department of Materials Science and Engineering
8-Jan-1996A bilayer Ti/Ag ohmic contact for highly doped n-type GaN filmsGuo, JD; Lin, CI; Feng, MS; Pan, FM; Chi, GC; Lee, CT; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Feb-1996Characterization of anodic aluminum oxide film and its application to amorphous silicon thin film transistorsLiang, CW; Luo, TC; Feng, MS; Cheng, HC; Su, D; 材料科學與工程學系; 電子工程學系及電子研究所; 奈米中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
16-Oct-2000Characterization of excimer-laser-annealed polycrystalline silicon films grown by ultrahigh-vacuum chemical vapor depositionChen, YC; Wu, YCS; Tung, IC; Chao, CW; Feng, MS; Chen, HC; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
18-Dec-1997Characterization of GaN epitaxial layers on SiC substrates with AlxGa1-xN buffer layersLin, CF; Cheng, HC; Feng, MS; Chi, GC; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Mar-1997Chemical-mechanical polishing and material characteristics of plasma-enhanced chemically vapor deposited fluorinated oxide thin filmsTseng, WT; Hsieh, YT; Lin, CF; Tsai, MS; Feng, MS; 材料科學與工程學系; 奈米中心; Department of Materials Science and Engineering; Nano Facility Center
31-Oct-1997Chemical-mechanical polishing of low-dielectric-constant spin-on-glasses: film chemistries, slurry formulation and polish selectivityWang, YL; Liu, C; Chang, ST; Tsai, MS; Feng, MS; Tseng, WT; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
24-Jun-1996The dependence of the electrical characteristics of the GaN epitaxial layer on the thermal treatment of the GaN buffer layerLin, CF; Chi, GC; Feng, MS; Guo, JD; Tsang, JS; Hong, JMH; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Apr-2003Device characteristics of polysilicon thin-film transistors fabricated by electroless plating Ni-induced crystallization of amorphous SiChao, CW; Wu, YCS; Hu, GR; Feng, MS; 材料科學與工程學系; Department of Materials Science and Engineering
22-Dec-2004Effect of carrier gas on the structure and electrical properties of low dielectric constant SiCOH film using trimethylsilane prepared by plasma enhanced chemical vapor depositionCheng, YL; Wang, Y; Lan, JK; Chen, HC; Lin, JH; Wu, Y; Liu, PT; Wu, Y; Feng, MS; 材料科學與工程學系; 光電工程學系; Department of Materials Science and Engineering; Department of Photonics
1-May-2004Effect of deposition temperature, on thermal stability in high-density plasma chemical vapor deposition fluorine-doped silicon dioxideCheng, YL; Wang, YL; Chen, HW; Lan, JL; Liu, CP; Wu, SA; Wu, YL; Lo, KY; Feng, MS; 材料科學與工程學系; Department of Materials Science and Engineering
1-Sep-2002The effect of plating current densities on self-annealing Behaviors of electroplated copper filmsChang, SC; Shieh, JM; Dai, BT; Feng, MS; Li, YH; 材料科學與工程學系; Department of Materials Science and Engineering
2006Effect of surface passivation removal on planarization efficiency in Cu abrasive-free polishingFang, JY; Tsai, MS; Dai, BT; Wu, YS; Feng, MS; 材料科學與工程學系; Department of Materials Science and Engineering
1-Nov-1999Effects of methyl silsesquioxane electron-beam curing on device characteristics of logic and four-transistor static random-access memoryLin, CF; Tung, IC; Feng, MS; 材料科學與工程學系; Department of Materials Science and Engineering
1-Jul-1999Effects of O-2- and N2O-plasma treatments on properties of plasma-enhanced-chemical-vapor-deposition tetraethylorthosilicate oxideChen, YC; Yang, MZ; Tung, IC; Chen, MP; Feng, MS; Cheng, HC; Chang, CY; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Dec-1995Effects of rapid thermal annealing on Si delta-doped GaInP grown by low pressure metalorganic chemical vapor depositionWang, CJ; Feng, MS; Chan, SH; Wu, JW; Chang, CY; Sze, SM; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
1-Jun-1996Effects of the rear interface states and fixed charges on the electrical characteristics of thin film transistors with thin amorphous silicon layersTai, YH; Su, FC; Feng, MS; Cheng, HC; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics