Browsing by Author Chiang, CC

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Issue DateTitleAuthor(s)
2001Comparative study of physical and electrical characteristics of F- and C-doped low-K CVD oxidesWu, ZC; Shiung, ZW; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-2001Divide-and-conquer learning and modular perceptron networksFu, HC; Lee, YP; Chiang, CC; Pao, HT; 資訊工程學系; 管理科學系; Department of Computer Science; Department of Management Science
1-Jun-2001The effect of oxygen in the annealing ambient on interfacial reactions of Cu/Ta/Si multilayersYin, KM; Chang, L; Chen, FR; Kai, JJ; Chiang, CC; Ding, PJ; Chin, B; Zhang, H; Chen, FS; 材料科學與工程學系; Department of Materials Science and Engineering
1-Nov-2004Effects of O-2- and N-2-plasma treatments on copper surfaceChiang, CC; Chen, MC; Li, LJ; Wu, ZC; Jang, SM; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2001Four-dimensional dielectric property image obtained from electron spectroscopic imaging seriesLo, SC; Kai, JJ; Chen, FR; Chang, L; Chen, LC; Chiang, CC; Ding, PJ; Chin, B; Zhang, H; Chen, FS; 材料科學與工程學系; Department of Materials Science and Engineering
2004Improvement in leakage current and breakdown field of Cu-comb capacitor using a silicon oxycarbide dielectric barrierChiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2003Leakage and breakdown mechanisms in cu damascene with a bilayer-structured a-SiCN/a-SiC dielectric barrierChiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-2004Leakage and breakdown mechanisms of Cu comb capacitors with bilayer-structured alpha-SiCN/alpha-SiC Cu-cap barriersChiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2001Leakage mechanism in Cu damascene structure with methylsilane-doped low-K CVD oxide as intermetal dielectricWu, ZC; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Li, LJ; Jang, SM; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2001Market competition and programming diversity: A study on the TV market in TaiwanLi, SCS; Chiang, CC; 傳播研究所; Institute of Communication Studies
1-Jun-2001Oxidation of Ta diffusion barrier layer for Cu metallization in thermal annealingYin, KM; Chang, L; Chen, FR; Kai, JJ; Chiang, CC; Chuang, G; Ding, PJ; Chin, B; Zhang, H; Chen, FS; 材料科學與工程學系; Department of Materials Science and Engineering
2004Physical and barrier properties of amorphous silicon-oxycarbide deposited by PECVD from octamethylcyclotetrasiloxaneChiang, CC; Chen, CC; Li, LJ; Wu, ZC; Jang, SM; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004Physical and barrier properties of PECVD amorphous silicon-oxycarbide from trimethylsilane and CO2Chiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2003Physical and barrier properties of plasma enhanced chemical vapor deposition alpha-SiC : N : H filmsChiang, CC; Wu, ZC; Wu, WH; Chen, MC; Ko, CC; Chen, HP; Jang, SM; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2003Physical and barrier properties of plasma-enhanced chemical vapor deposited alpha-SiC : H films from trimethylsilane and tetramethylsilaneChiang, CC; Chen, MC; Ko, CC; Wu, ZC; Jang, SM; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-2003Physical and barrier properties of plasma-enhanced chemical vapor deposited alpha-SiCN : H films with different hydrogen contentsChiang, CC; Chen, MC; Ko, CC; Jang, SM; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2001Physical and electrical characteristics of F- and C-doped low dielectric constant chemical vapor deposited oxidesWu, ZC; Shiung, ZW; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2001Physical and electrical characteristics of methylsilane- and trimethylsilane-doped low dielectric constant chemical vapor deposited oxidesWu, ZC; Shiung, ZW; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2002TDDB reliability improvement in Cu damascene by using a bilayer-structured PECVD SiC dielectric barrierChiang, CC; Chen, MC; Wu, ZC; Li, LJ; Jang, SM; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-2004TDDB reliability improvement of Cu damascene with a bilayer-structured alpha-SiC : H dielectric barrierChiang, CC; Chen, MC; Wu, ZC; Li, LJ; Jang, SM; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics