Browsing by Author Chao, TS

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Issue DateTitleAuthor(s)
2005Effects of metallic contaminants on the electrical characteristics of ultrathin gate oxidesPan, TM; Ko, FH; Chao, TS; Chen, CC; Chang-Liao, KS; 材料科學與工程學系奈米科技碩博班; 電子物理學系; Graduate Program of Nanotechnology , Department of Materials Science and Engineering; Department of Electrophysics
19-Feb-1998Effects of N2O-annealed sacrificial oxide on the short-channel effects of nMOSFETsJong, FC; Huang, TY; Chao, TS; Lin, HC; Wang, MF; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-Jan-1999The effects of shallow germanium halo doping on N-channel metal oxide semiconductor field effect transistorsWang, MF; Chien, CH; Chao, TS; Lin, HC; Jong, FC; Huang, TY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2001The effects of super-steep-retrograde indium channel profile on deep submicron n-channel metal-oxide-semiconductor field-effect transistorChen, CM; Chang, SJ; Chou, JW; Lin, T; Yeh, WK; Chang, CY; Luo, WZ; Lee, YJ; Chao, TS; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-2001Electrical characteristics of thin cerium oxide film on silicon substrate by reactive DC sputteringPan, TM; Chien, CH; Lei, TF; Chao, TS; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-2001Electrical properties of shallow p(+)-n junction using boron-doped Si1-xGex layer deposited by ultrahigh vacuum chemical molecular epitaxyHuang, HJ; Chen, KM; Chang, CY; Chao, TS; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-1999Enhancement of integrity of polysilicon oxide by using a combination of N2O nitridation and CMP processLei, TF; Chen, JH; Wang, MF; Chao, TS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-1998Evaluation of plasma charging damage in ultrathin gate oxidesLin, HC; Chen, CC; Chien, CH; Hsein, SK; Wang, MF; Chao, TS; Huang, TY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-2000High performance 0.1 mu m dynamic threshold MOSFET using indium channel implantationChang, SJ; Chang, CY; Chao, TS; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2001High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devicesYang, WL; Chao, TS; Cheng, CM; Pan, TM; Lei, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-2001High quality interpoly-oxynitride grown by NH3 nitridation and N2O RTA treatmentPan, TM; Lei, TF; Yang, WL; Cheng, CM; Chao, TS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-2000High quality ultrathin CoTiO3 high-k gate dielectricsPan, TM; Lei, TF; Chao, TS; Chang, KL; Hsieh, KC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2005High voltage applications and NBTI effects of DT-pMOSFETS with reverse Schottky substrate contactsLee, YJ; Chao, TS; Huang, TY; 電子物理學系; Department of Electrophysics
5-Mar-2001High-k cobalt-titanium oxide dielectrics formed by oxidation of sputtered Co/Ti or Ti/Co filmsPan, TM; Lei, TF; Chao, TS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-2000High-performance and high-reliability 80-nm gate-length DTMOS with indium super steep retrograde channelChang, SJ; Chang, CY; Chen, CM; Chao, TS; Lee, YJ; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2006High-performance poly-Si TFTs with fully Ni-self-aligned silicided S/D and gate structureKuo, PY; Chao, TS; Wang, RJ; Lei, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-2004High-voltage and high-temperature applications of DTMOS with reverse Schottky barrier on substrate contactsChao, TS; Lee, YJ; Huang, TY; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-Apr-2004Hot carrier degradations of dynamic threshold silicon on insulator p-type metal-oxide-semiconductor field effect transistorsChao, TS; Lee, YJ; Huang, CY; Lin, HC; Li, YM; Huang, TY; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-Aug-2002Impact of nitrogen and/or fluorine implantation on deep-submicron Co-salicide processChang, TY; Lei, TF; Chao, TS; Chen, SW; Kao, LM; Chen, SK; Tuan, A; Su, TP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-2002Impacts of gate structure on dynamic threshold SOI nMOSFETsLo, WC; Chang, SJ; Chang, CY; Chao, TS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics