Browsing by Author Chang, KM

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Issue DateTitleAuthor(s)
1-Jun-1996Effects of gas ratio on electrical properties of electron-cyclotron-resonance nitride films grown at room temperatureChang, KM; Tsai, JY; Li, CH; Yeh, TH; Wang, SW; Yang, JY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2003Electrical and reliability characteristics of 1nm ultrathin oxynitride gate dielectric prepared by RTPYang, WC; Chen, CF; Chang, KM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-2003Electrical characteristics of low temperature polysilicon TFT with a novel TEOS/oxynitride stack gate dielectricChang, KM; Yang, WC; Tsai, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2000Electrical characteristics of polyoxide prepared by N-2 preannealingChang, KM; Lee, TC; Wang, JY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-2002Electrical properties of SiN/GaN MIS diodes formed by ECR-CVDChang, KM; Cheng, CC; Lang, CC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-2001Enhanced degradation in polycrystalline silicon thin-film transistors under dynamic hot-carrier stressChang, KM; Chung, YH; Lin, GM; Deng, CG; Lin, JH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2000Fabrication of cantilever type microswitches using surface micromachining technologyChang, KM; Jou, CF; Luo, JJ; Kuo, LY; Deng, IC; Liang, C; Luhmann, NC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2004High-performance RSD poly-Si TFTs with a new ONO gate dielectricChang, KM; Yang, WC; Hung, BF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2004High-performance RSD poly-Si TFTs with a new ONO gate dielectricChang, KM; Yang, WC; Hung, BF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-2004Highly reliable GaN-based light-emitting diodes formed by p-In0.1Ga0.9N-ITO structureChang, KM; Chu, JY; Cheng, CC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-1996Highly selective etching for polysilicon and etch-induced damage to gate oxide with halogen-bearing electron-cyclotron-resonance plasmaChang, KM; Yeh, TH; Deng, IC; Lin, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2002Hot carrier induced degradation in the low temperature processed polycrystalline silicon thin film transistors using the dynamic stressChang, KM; Chung, YH; Lin, GM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-1997The influence of precleaning process on the gate oxide film fabricated by electron cyclotron resonance plasma oxidationChang, KM; Li, CH; Fahn, FJ; Tsai, JY; Yeh, TH; Wang, SW; Yang, JY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2000Influence of sheet resistance on N2O-grown polyoxideChang, KM; Lee, TC; Liu, SH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-1996Influences of damage and contamination from reactive ion etching on selective tungsten deposition in a low-pressure chemical-vapor-deposition reactorChang, KM; Yeh, TH; Wang, SW; Li, CH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
26-Aug-1996Influences of deposition temperature on thermal stability and moisture resistance of chemical vapor deposited fluorinated silicon oxide by using indirect fluorinating precursorChang, KM; Wang, SW; Wu, CJ; Yeh, TH; Li, CH; Yang, JY; 奈米中心; Nano Facility Center
26-Aug-1996Influences of deposition temperature on thermal stability and moisture resistance of chemical vapor deposited fluorinated silicon oxide by using indirect fluorinating precursorChang, KM; Wang, SW; Wu, CJ; Yeh, TH; Li, CH; Yang, JY; 電子工程學系及電子研究所; 奈米中心; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
2005An investigation of inner light during Zen meditation using alpha-suppressed EEG and VEPChang, KM; Liu, CY; Lo, PC; 電控工程研究所; Institute of Electrical and Control Engineering
1-May-1997Leakage performance and breakdown mechanism of silicon-rich oxide and fluorinated oxide prepared by electron cyclotron resonance chemical vapor depositionChang, KM; Wang, SW; Yeh, TH; Li, CH; Luo, JJ; 奈米中心; Nano Facility Center
1-Mar-1998Low-frequency noise characteristics of hot carrier-stressed buried-channel pMOSFETsJang, SL; Chen, HK; Chang, KM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics